高频MOS 三极管

 产品详细说明

  Features

  • High Output Power, High Gain, High Efficiency

  Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%

  (VDS = 6 V, f = 520 MHz)

  • Compact package capable of surface mounting

  • Electrostatic Discharge Immunity Test

  (IEC Standard, 61000-4-2, Level4)

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